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SUM60N04-05LT
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET with Sensing Diode
PRODUCT SUMMARY
V(BR)DSS (V)
40
FEATURES
ID (A)
60a 20a
rDS(on) (W)
0.0045 @ VGS = 10 V 0.0065 @ VGS = 4.5 V
D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package
APPLICATIONS
D
D2PAK-5L
D Automotive D Industrial
T1 G 12345 T2 D1 D2
S G D T1 S T2 N-Channel MOSFET
Ordering Information: SUM60N04-05LT
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IS IAR EAR PD TJ, Tstg
Limit
40 "20 60a 60a 250 60a 60a 180 200c 3.75d -55 to 175
Unit
V
A
mJ W _C
Maximum Power Dissipationa Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientd Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71747 S-40862--Rev. C, 03-May-04 www.vishay.com PCB Mountd
Symbol
RthJA RthJC
Limit
40 0.75
Unit
_C/W
1
SUM60N04-05LT
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 60 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 60 A, TJ = 125_C VGS = 10 V, ID = 60 A, TJ = 175_C Sense Diode Forward Voltage Sense Diode Forward Voltage Increase Forward Transconductancea VFD1 and VFD2 DVF gfs IF = 50 mA IF = 25 mA From IF = 25 mA to IF = 50 mA VDS = 15 V, ID = 20 A 655 600 30 35 120 0.0035 0.0051 0.0045 0.0065 0.0069 0.0086 715 660 80 S mV W 40 1 3 "100 1 50 500 A m mA V nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 20 V, RL = 0.8 W ID ] 25 A, VGEN = 10 V, Rg = 2.5 W VDS = 20 V, VGS = 10 V, ID = 25 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 6000 1100 700 130 25 40 15 80 100 100 20 120 150 150 ns nC pF
Turn-On Delay Timec Rise Timec
Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 60 A, di/dt = 100 A/ms , m IF = 60 A, VGS = 0 V 1.0 60 2.1 0.065 60 200 1.5 90 4 0.18 A V ns A mC
Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
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2
Document Number: 71747 S-40862--Rev. C, 03-May-04
SUM60N04-05LT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 10 thru 6 V 5V I D - Drain Current (A) 250
Transfer Characteristics
200 I D - Drain Current (A)
200
150
150
100 4V 50 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V)
100 TC = 125_C 50 25_C -55_C 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V)
Transconductance
200 TC = -55_C 160 g fs - Transconductance (S) 25_C 125_C 120 rDS(on) - On-Resiistance (Normalized) 0.012 0.015
On-Resistance vs. Drain Current
0.009 VGS = 4.5 V VGS = 10 V 0.003
80
0.006
40
0 0 20 40 60 80 100 120 VGS - Gate-to-Source Voltage (V)
0.000 0 20 40 60 80 100 120
ID - Drain Current (A) 20 VGS = 20 V ID = 25 A
10000
Capacitance
Gate Charge
8000 C - Capacitance (pF)
V GS - Gate-to-Source Voltage (V)
Ciss
16
6000
12
4000 Coss Crss 0 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V)
8
2000
4
0 0 40 80 120 160 200 240 Qg - Total Gate Charge (nC) www.vishay.com
Document Number: 71747 S-40862--Rev. C, 03-May-04
3
SUM60N04-05LT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.0
On-Resistance vs. Junction Temperature
100 VGS = 10 V ID = 25 A I S - Source Current (A)
Source-Drain Diode Forward Voltage
r DS(on) - On-Resistance (W) (Normalized)
1.6
1.2
TJ = 150_C 10 TJ = 25_C
0.8
0.4
0.0 -50
-25
0
25
50
75
100
125
150
175
1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (_C)
1000
Avalanche Current vs. Time
Drain Source Breakdown vs. Junction Temperature
55 ID = 1 mA
52 100 I Dav (a) IAV (A) @ TA = 150_C 10 V (BR)DSS (V) 49
46 1
IAV (A) @ TA = 25_C
43
0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec)
40 -50
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
1.0
Sense Diode Forward Voltage vs. Temperature
0.01
Sense Diode Forward Voltage
0.8 ID = 50 mA I F (V) 0.6 I F (V) ID = 25 mA 0.4 0.0001 0.001 TJ = 150_C
0.2
0.00001
TJ = 25_C
0.0 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com
0.000001 0 0.25 0.5 0.75 VF (V) Document Number: 71747 S-40862--Rev. C, 03-May-04 1.0 1.25 1.5
4
SUM60N04-05LT
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) 100
1000 Limited by rDS(on) I D - Drain Current (A)
Safe Operating Area
10 ms 100 ms
I D - Drain Current (A)
1 ms 10 10 ms 100 ms dc TC = 25_C Single Pulse
1
0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 71747 S-40862--Rev. C, 03-May-04
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